Super-Lattice Light Emitting Diodes (SLEDS) on GaAs

Infrared scene projectors (IRSPs) are a critical laboratory tool for setup, testing and calibration of infrared imaging systems. These projectors create an infrared scene of precisely known characteristics. The projector typically uses a single chip infrared emitter array to produce actual infrared imagery. A promising device technology for building emitter arrays is infrared light emitting diodes (LEDs). Typically, the LED arrays are mated with CMOS read-in integrated circuit (RIIC) chips using flip-chip bonding. In this paper, we describe two alternative approaches one where LED arrays are grown on the backside of GaAs substrates with prefabricated GaAs driver circuits on the front side, and another where LED array wafers are wafer bonded with RIIC wafers. If a successful approach can be reached a significant gain in thermal management and radiation performance of the LED arrays will be achieved.